PART |
Description |
Maker |
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
GL496 |
High Speed Infrared Emitting Diode
|
SHARP[Sharp Electrionic Components]
|
GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Components
|
VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
TSHF5210 |
High Speed Infrared Emitting Diode in T-13/4 Package
|
VISAY[Vishay Siliconix]
|
VSMB2020X01 VSMB2000X01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMG2020X01 VSMG2000X01 |
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMB14940 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
TSHG5210 TSHG521009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSFF541009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http:// Vishay Siliconix
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